Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.
Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube
Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)
Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.
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Zener diode
Features
Product Name: Zener Diode
Product model: BZT52C18S
product features:
Planar die construction
200mW power dissipation on ceramic PBC
General purpose, Medium current
Ideally suited for automated assembly processes
Available in Lead free version
Product parameters:
Pd power dissipation: 200mW
Vz stable voltage: Nom=18V Min=16.8V Max=19.1V
Zzt breakdown impedance: 45Ω
Zzk breakdown impedance: 225Ω
IR reverse current: 0.1uA
Vf forward voltage drop: 0.9V
Package: SOD-323
| Parameter Name | Attribute value |
| Maker | JCET |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Diode type | ZENER DIODE |
| Maximum dynamic impedance | 45 Ω |
| Number of components | 1 |
| Maximum operating temperature | 150 °C |
| Maximum power dissipation | 0.2 W |
| Nominal reference voltage | 18 V |
| surface mount | YES |
| Maximum voltage tolerance | 6.6% |
| Working test current | 5 mA |
| Base Number Matches | 1 |
FPGA/CPLD
stm32/stm8
Domestic Chip Exchange
RF/Wirelessly
RF/Wirelessly
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