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BC858CT/R7

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC858CT/R7 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3

BC858CT/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

BC858CT/R7 Preview

Download Datasheet
BC856,BC857,BC858,BC859 SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General Purpose Amplifier Applications
• Collector Current IC = -100mA
• Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
Series
0.056(1.40)
0.047(1.20)
0.008(0.20)
0.003(0.08)
0.120(3.04)
0.110(2.80)
30/45/65 Volts
POWER
330 mWatts
0.006(0.15)MIN.
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.079(2.00)
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking:
0.070(1.80)
0.004(0.10)MAX.
Device Marking:
BC856A=56A
BC856B=56B
BC857A=57A
BC857B=57B
BC857C=57C
BC858A=58A
BC858B=58B
BC858C=58C
BC859B=59B
BC859C=59C
Top View
3
Collector
1
Base
1
Base
2
Emitter
3
Collector
2
Emitter
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Max Power Dissipation(Note1)
Typical Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
NOTES:
1. Transistor mounted on FR-4 board 8 cm .
2
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
TOT
R
ΘJA
T
J
,T
STG
BC856
-65
-80
BC857
-45
-50
-5
BC858
-30
-30
BC859
Units
V
V
V
mA
mW
o
-100
330
375
-50 to 150
C/W
o
C
April 23,2012_REV.03
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