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BC850B_R1_00001

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN,
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC850B_R1_00001 Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN,

BC850B_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.33 W
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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BC846,BC847,BC848,BC849,BC850 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
0.120(3.04)
0.110(2.80)
30/45/65 Volts
POWER
330 mWatts
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
Device Marking:
BC846A=46A
BC846B=46B
BC847A=47A
BC847B=47B
BC847C=47C
BC848A=48A
BC848B=48B
BC848C=48C
BC849B=49B
BC849C=49C
BC850B=50B
BC850C=50C
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
BC846
BC847,BC850
BC848,BC849
BC846
BC847,BC850
BC848,BC849
BC846
BC847,BC850
BC848,BC849
Symbol
V
CEO
Value
65
45
30
80
50
30
6
6
5
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
V
EBO
I
C
V
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Operating Junction Temperature and Storage Temperature Range
Symbol
P
TOT
R
JA
T
J
,T
STG
Value
330
375
-55 to 150
Units
mW
O
C/W
O
C
Note 1: Transistor mounted on FR-4 board 8 cm .
2
August 5,2013-REV.06
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