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2SC1623

Description
Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size558KB,1 Pages
ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.
Websitehttp://www.slkormicro.com/

Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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2SC1623 Overview

Rated power: 200mW Collector current Ic: 100mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN

2SC1623 Parametric

Parameter NameAttribute value
rated power200mW
Collector current Ic100mA
Collector-emitter breakdown voltage Vce50V
Transistor typeNPN

2SC1623 Preview

Download Datasheet
2SC1623
TRANSISTOR (NPN)
FEATURES
High DC current gain :h
FE
=200(Typ) V
CE
=6V,I
C
=1mA
High voltage:V
CEO
=50V
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
100
200
150
-55-150
Unit
V
V
V
mA
mW
1.
BASE
2.
EMITTER
3.
COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
I
C
=
100
μA,I
E
=0
I
C
=
1
mA,I
B
=0
I
E
=
100
μA,I
C
=0
V
CB
=
60
V,I
E
=0
V
EB
=
5
V,I
C
=0
V
CE
=
6
V,I
C
=
1
mA
I
C
=
100
mA,I
B
=
10
mA
I
C
=
100
mA,I
B
=
10
mA
V
CE
=
6
V,I
C
=
10
mA, f=30MHz
Min
Typ
Max
Unit
V
V
V
60
50
5
0.1
0.1
90
200
μA
μA
600
0.3
1
V
V
MHz
f
T
150
CLASSIFICATION OF h
FE
Rank
Range
Marking
L4
90-180
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
www.slkormicro.com
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