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2CW032180YQ-PA

Description
2CW032XXXYQ-PX SERIES ZENER DIODE CHIPS FOR GLASS SEAL WITH ASYMMETRY LIMITS
CategoryDiscrete semiconductor    diode   
File Size103KB,4 Pages
ManufacturerSilan
Websitehttp://www.silanic.com.cn/
Environmental Compliance
Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.
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2CW032180YQ-PA Overview

2CW032XXXYQ-PX SERIES ZENER DIODE CHIPS FOR GLASS SEAL WITH ASYMMETRY LIMITS

2CW032180YQ-PA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSilan
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance150 Ω
Number of components1
Maximum operating temperature175 °C
Nominal reference voltage18 V
surface mountYES
Working test current5 mA
Base Number Matches1

2CW032180YQ-PA Preview

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2CW032XXXYQ-PX
2CW032XXXYQ-PX SERIES ZENER DIODE CHIPS FOR GLASS SEAL WITH
ASYMMETRY LIMITS
DESCRIPTION
2CW032XXXYQ-PX series are low-power zener diode chips
for glass seal that fabricated in silicon epitaxial planar
technology.
The series is asymmetrical regulator voltage chips, that is
the upper limit and lower limit is asymmetrical, e.g. Vz=3.0V
chips: the upper limit is 3.25V, the lower limit Is 2.95V ,the
specification design is better suitable for user’s using habit
For user convenient choice regulator voltage in narrow limit.
The series divided into 4 types in given regulator voltage
and named PA, PB, PC and PD.
2CW032XXXYQ-PX CHIP TOPOGRAPHY
The chip thickness is 140μm. The top electrode material is
Ag bump, and the backside electrode material is Ag.
Chip size: 0.32 X 0.32 (mm) .
2
2CW032XXXYQ-PX APPEARANCE
Chip Appearance Diagram
Parameter
Chip Size
Chip Thickness
Bump Size
Bump Height
Scribe Line Width
Symbol
D
C
A
B
/
Min.
290
120
196
25
--
Type
--
--
--
--
40
Max.
310
160
240
55
--
Unit
μm
μm
μm
μm
μm
ABSOLUTE MAXIMUM RATINGS
Characteristics
Junction Temperature
Storage Temperature
Symbol
T
j
T
stg
Test conditions
----
----
Value
175
-50~+175
Unit
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.02.28
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