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1N5408_R2_00001

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, HALOGEN FREE, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1N5408_R2_00001 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, HALOGEN FREE, PLASTIC PACKAGE-2

1N5408_R2_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionHALOGEN FREE, PLASTIC PACKAGE-2
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

1N5408_R2_00001 Preview

Download Datasheet
1N5400~1N5408
HIGH CURRENT PLASTIC SILICON RECTIFIER
VOLTAGE
FEATURES
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
3.0 Ampere
DO-201AD
Unit: inch(mm)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• High current capability
• Low leakage
• Exceeds environmental standards of MIL-S-19500/228
• Lead free in comply with EU RoHS 2011/65/EU directives
.052(1.3)
.048(1.2)
.375(9.5)
MECHANICAL DATA
• Case: DO-201AD Molded plastic
• Lead: Axial leads, solderable per MIL-STD-750,Method 2026
guaranteed
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.0395 ounces, 1.122 gram
.285(7.2)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load,derate current by 20%.
PA RA ME TE R
Ma xi mum R e cur re nt P e a k Re ve rs e V o lta g e
Ma xi mum R MS Vo lta g e
Ma xi mum D C B lo c k i ng V o lta g e
Ma xi mum A ve ra g e F o r wa r d C urr e nt .3 7 5 " ( 9 .5 mm)
le a d le ng th
P e a k F o r wa r d S urg e C urr e nt : 8 .3 ms s i ng le ha lf s i ne - wa ve
s up e ri mp o s e d o n r a te d lo a d (J E D E C me tho d )
Ma xi mum F o rwa rd Vo lta g e a t 3 .0 A
Ma xi mum D C R e ve r s e C urr e nt a t T
J
=2 5
O
C
Ra te d D C B lo c ki ng Vo lta g e T
J
=1 0 0
O
C
Typ i ca l J unc ti o n c a p a c i ta nc e ( No te 1 )
Typ i ca l The r ma l Re s i s ta nc e (No te 2 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra tur e Ra ng e
S YMB OL
1 N5 4 0 0 1 N5 4 0 1 1 N5 4 0 2 1 N5 4 0 3 1 N5 4 0 4 1 N5 4 0 5 1 N5 4 0 6 1 N5 4 0 7 1 N5 4 0 8
UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
C
J
R
θJ
A
R
θJ
C
T
J
,T
S TG
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3 .0
200
1 .2
5 .0
1000
30
35
15
-55 to +150
500
350
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
pF
O
1.0(25.4)MIN.
.210(5.3)
.188(4.8)
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.
REV.0.2-MAR.15.2010
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