1A7R datasheet, PDF - EEWORLD Datasheet

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1A7R: CategoryDiscrete semiconductor General diode; File Size165KB，2 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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1A7R

1.0AMP . SILICON RECTIFIERS

FEATURE

.High

current capability

.Low

forward voltage drop

.Low

power loss, high efficiency

.High

surge capability

.High

temperature soldering guaranteed

260°C /10sec/ 0.375" lead length at 5 lbs tension

.Φ0.6mm

leads

R-1

. 20.

787( 0)

. 3.

146( 7)

. 3.

130( 3)

. 20.

787( 0)

. 0.

025( 65)

. 0.

021( 55)

MECHANICAL DATA

.Terminal:

Plated axial leads solderable per

MIL-STD 202E, method 208C

.Case:

Molded with UL-94 Class V-0 recognized

Flame Retardant Epoxy (free halogen)

.Polarity:

color band denotes cathode

.Mounting

position: any

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

. 2.

102( 6)

. 2.

087( 2)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) lead length at T

=50°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Forward Voltage at 1.0A DC

Maximum Forward Voltage at 3.0A DC

Maximum DC Reverse Current

at rated DC blocking voltage

=25°C

=100°C

SYM

BOL

1A7R

1000

700

1000

1.0

units

RRM

RMS

F(AV)

FSM

(JA)

STG

30.0

1.0

1.3

5.0

50.0

-55 to +150

µA

°C/W

°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Storage Temperature

Operation JunctionTemperature

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C.Board Mounted.

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