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12N60F

Description
MOSFET
CategoryDiscrete semiconductor   
File Size880KB,9 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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12N60F Overview

MOSFET

Features

Product Name: MOSFET


Product model: 12N60F


Product Description:


This Power MOSFET is produced using


advanced planar stripe DMOS technology.


This latest technology has been especially


designed to minimize on-state resistance,


Have a high rugged avalanche


characteristics.These devices are well suited


for high efficiency switched mode power


supplies, active power factor


correction.electronic lamp ballasts based on


half bridge topology.


parameter:


Drain-Source Voltage VDS 600 V


Drain Current-Continuous ID 12A


Drain Current -Pulsed (Note 1) IDM 48A


Maximum Power Dissipation PD 231W


VGS Gate-to-Source Voltage ± 30 V


EAS Single PulseAvalanche Energy 865mJ


Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃


dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns


Package: TO-220F

12N60F Preview

Download Datasheet
12N60/12N60F
600V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS
V
DSS
600V
R
DS(ON)
0.65
Ω
I
D
12A
technology.This advanced technology has
been especially tailored tominimize on-state
resistance, provide superior switching
performance, and withstand high energy
pulse in the avalanche and commutation
mode. These devices are well suited for high
efficiency switched mode power supplies,
active power factor correction based on half
bridge topology.
Features
•12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 52nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
12N60/12N60F
TO-220/220F
0GFD
PART NUMBER
Ordering Information
PACKAGE
BRAND
www.goford.cn
TEL:0755-86350980 FAX:0755-86350963
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