BAV21WS datasheet, PDF - EEWORLD Datasheet

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BAV21WS: DescriptionReverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA switching, 250V 200mA 1.25V 50ns, SOD-323; CategoryDiscrete semiconductor Switching diode; File Size921KB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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BAV21WS Overview

Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA switching, 250V 200mA 1.25V 50ns, SOD-323

BAV21WS Parametric

Parameter Name	Attribute value
Reverse recovery time (trr)	50ns
DC reverse withstand voltage (Vr)	250V
Average rectified current (Io)	200mA
Forward voltage drop (Vf)	1.25V @ 200mA

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BAV19-21WS

SWITCHING

SOD323

250mW SOD323 Fast Switching Diode

ROHS

Features



Fast Switching Device (TRR <50nS)



Power Dissipation of 250mW



High Stability and High Reliability



Low reverse leakage

MARKING:

BAV19WS: A8

BAV20WS: T2

BAV21WS: T3

Mechanical Data



SOD-323 Small Outline Plastic Package



Color band denotes cathode end



Mounting Position: Any

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameters

Reverse Voltage

Peak Reverse Voltage

Power Dissipation

Operating junction temperature

Storage temperature range

Working Inverse Voltage

Average Rectified Current

Non-repetitive Peak Forward Current

Peak Forward Surge Current @tp=1ms; TA=25℃

Symbol

VRM

WIV

IFM

IFSM

Value

BAV19WS

120

100

BAV20WS

200

150

250

150

-65-+150

200

400

1.7

BAV21WS

250

Unit

℃

Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics

(

Ratings at 25℃

Symbols

ambient temperature unless otherwise specified).

Parameter

Test Condition

IB=100uA BAV19WS

Limits

Min

120

200

250

---

0.1

1.00

1.25

---

Max

Unit

VRB

Reverse Voltage

BAV20WS

BAV21WS

VR=100V BAV19WS

Reverse Leakage Current

VR=150V BAV20WS

VR=200V BAV21WS

IF=100mA

IF=200mA

IF= 30mA, IR=30mA

RL=100Ω

IRR=3mA

Forward Voltage

Reverse Recovery Time

Capacitance

VR=0V, f=1MHZ

---

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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