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GBLC12C-N

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 10A (8/20us) Clamping voltage: 28V Breakdown voltage (minimum): 13.3V Reverse shutdown voltage (typ): 12V (Max) SOD- 323/0805 VBWM=12V Bidirectional air 30KA Contact 30KA Junction capacitance <3PF
CategoryDiscrete semiconductor    ESD diode   
File Size798KB,4 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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GBLC12C-N Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 10A (8/20us) Clamping voltage: 28V Breakdown voltage (minimum): 13.3V Reverse shutdown voltage (typ): 12V (Max) SOD- 323/0805 VBWM=12V Bidirectional air 30KA Contact 30KA Junction capacitance <3PF

GBLC12C-N Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)10A (8/20us)
clamping voltage28V
Breakdown voltage (minimum value)13.3V
Reverse shutdown voltage (typ)12V (Max)

GBLC12C-N Preview

Download Datasheet
ESD Protection Diode
GBLC12C-N
»
Features
280Watts peak pulse power (tp = 8/20μs)
Low clamping voltage
Low leakage current
Protection one power line
Low Capacitance: 1.0 pF Typical
IEC 61000-4-2 ±30kV contact ±30kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 10A (8/20μs)
»
Applications
»
Mechanical Data
Ethernet - 10/100/1000 Base T
Cellular Phones
Handheld - Wireless Systems
Personal Digital Assistant (PDA)
USB Interface
SOD-323 package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
»
Schematic & PIN Configuration
SOD-323
Revision 2018
www.born-tw.com
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