MMBT2907A datasheet, PDF - EEWORLD Datasheet

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MMBT2907A: DescriptionRated power: 250mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 60V Transistor type: PNP transistors, PNP 60V 600mA 250mW, SOT-23; CategoryDiscrete semiconductor triode; File Size983KB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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MMBT2907A Overview

Rated power: 250mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 60V Transistor type: PNP transistors, PNP 60V 600mA 250mW, SOT-23

MMBT2907A Parametric

Parameter Name	Attribute value
rated power	250mW
Collector current Ic	600mA
Collector-emitter breakdown voltage Vce	60V
Transistor type	PNP

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MMBT2907A

Transistors

SOT-23

SOT-23 Plastic-Encapsulate Transistors(PNP)

RHOS

Features



Epitaxial planar die construction



Complementary NPN Type available(MMBT2222A)

Maximum Ratings

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Symbol

CBO

1. BASE

2. EMITTER

3. COLLECTOR

Parameter

Value

-60

-5

-600

250

500

150

-55 to +150

Units

℃/W

℃

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature

CEO

EBO

θJA

stg

MARKING: 2F

Electrical Characteristics

(

Ratings at 25℃

ambient temperature unless otherwise specified).

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Base cut-off current

Collector cut-off current

Symbol

(BR)CBO

(BR)CEO*

(BR)EBO

CBO

EBO

CEX

FE(1)

FE(2)

Test

conditions

MIN

-60

-5

TYP

MAX

UNIT

=-10μA,I

=-10mA,I

=-10μA,I

=-50V,I

=-3V, I

=-30 V, V

BE(off)

=-0.5V

=-10V,I

=-150mA

=-10V,I

=-0.1mA

=-10V,I

=-1mA

=-10V,I

=-10mA

=-10V,I

=-500mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-20V,I

=-50mA,f=100MHz

=-30V,I

=-150mA,

=-15mA

=-6V,I

=-150mA,

=- I

=- 15mA

-20

-10

-50

100

-0.4

-1.6

-1.3

-2.6

200

225

300

DC current gain

FE(3)

FE(4)

FE(5)

CE(sat)*

BE(sat)*

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

Rise time

Storage time

Fall time

*Pulse test: t

≤300μS, δ≤0.02.

MHz

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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