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QWE4562009
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Published on 2020-8-31 16:01
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Published on 2020-8-31 17:26
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Teacher Mei, look at this.
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Published on 2020-9-1 15:45
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Published on 2020-8-31 17:27
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What's the problem with the reference design downloaded from TI's official website?
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Published on 2020-9-1 15:35
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QWE4562009
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QWE4562009
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Published on 2020-9-1 15:51
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How do you say Mr. Zhang?
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Published on 2020-9-4 22:11
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Published on 2020-9-3 09:32
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I looked at the datasheet of this chip, and it has integrated bootstrap circuit and isolation circuit. Nowadays, the integration of chips is getting higher and higher, and various different parts can be integrated together. It really subverts the experience.
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Published on 2020-9-5 06:57
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YesWatt艺瓦特电子科技有限公司 傻大粗电源转换器制造商 https://apu5ob0ydv0ysskfm03hs4dtqfr97j68.taobao.com/ |
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QWE4562009
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The chip used in the first floor picture is not BQ76200. Multiple MOS tube gates are connected in parallel. You said "this way, the gate capacitance will be large", and then a 5.1k resistor is connected in series. I am afraid that the switching speed will be quite slow.
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Published on 2020-9-5 07:02
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Published on 2020-9-5 06:57
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Published on 2020-9-5 07:02
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The same principle as TI's BQ40Z50 is also a high-side driver MOS
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Published on 2020-9-7 17:55
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QWE4562009
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Published on 2020-9-7 18:06
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Assume that a group of 4 series ternary lithium battery packs has a maximum voltage of 16.8, allowing the user device to have a 1000uF capacitor, and the capacitor charging charge is 0.0168C. The following MOSFET should control the charging peak to 0.7 times the safe zone, that is, 120A. Then the MOSFET opening process must not be less than 140uS. Hehe, this is not a big deal. Some users want to connect 10
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Published on 2020-9-9 09:11
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Published on 2020-9-9 09:11
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YesWatt艺瓦特电子科技有限公司 傻大粗电源转换器制造商 https://apu5ob0ydv0ysskfm03hs4dtqfr97j68.taobao.com/ |
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Published on 2020-9-9 09:18
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