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Published on 2019-12-27 10:12
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The gate is grounded and it is conducting. . . .
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Published on 2019-12-30 10:06
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Published on 2019-12-27 10:16
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Published on 2019-12-27 10:17
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Published on 2019-12-27 10:33
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Published on 2019-12-27 10:42
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Published on 2019-12-27 10:44
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So what dcexpert said on the second post, "the diode between the DS of the MOS leaks over" is correct. If you want to use a P-channel power MOS tube as a power switch, you must swap the drain and source of the tube in the first post.
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Published on 2019-12-27 15:56
So what dcexpert said on the second post, "the diode between the DS of the MOS leaks over" is correct. If you want to use a P-channel power MOS tube as a power switch, you must swap the drain and source of the tube in the first post.
Details
Published on 2019-12-27 12:20
So what dcexpert said on the second post, "the diode between the DS of the MOS leaks over" is correct. If you want to use a P-channel power MOS tube as a power switch, you must swap the drain and source of the tube in the first post.
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Published on 2019-12-27 12:15
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Published on 2019-12-27 12:14
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Published on 2019-12-27 12:15
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Published on 2019-12-27 12:20
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Published on 2019-12-27 13:04
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Published on 2019-12-27 13:05
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Published on 2019-12-27 13:48
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Published on 2019-12-27 15:56
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You must first determine whether the MOS tube is turned off, that is, when the RS_EN pin is floating, whether the voltage of VCC3 is 0. Then analyze the cause of the leakage current, including the measurement method, the front and rear circuits, etc.
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Published on 2019-12-30 10:06
You must first determine whether the MOS tube is turned off, that is, when the RS_EN pin is floating, whether the voltage of VCC3 is 0. Then analyze the cause of the leakage current, including the measurement method, the front and rear circuits, etc.
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Published on 2019-12-30 09:31
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Published on 2019-12-30 09:07
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Published on 2019-12-30 09:31
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Published on 2019-12-30 10:06
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