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Project requirements: Use a cyclic overwrite method (record data every T microseconds, record Y seconds, and then sample and overwrite the data of the previous Y seconds in the next Y seconds), update the data in the memory every 40us, that is, write data every 40us. If flash is used, it will not last for a day due to the problem of the number of erase and write times. Is there any way to reduce the number of erase and write times or change something?
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You can consider using non-volatile memory chips, such as Mram memory, product introduction: [attach]415491[/attach] Technical support can be provided  Details Published on 2019-5-28 14:14
 

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Do not use a fixed address for storage, such as Y0->0 Y1->1 Y2->2 Yn->N, and return to address 0 when storing to N. If N is 100, the write life will be extended 100 times.
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"If I choose flash, it won't last a day due to the number of erase and write cycles. Is there any solution?" Can't I use RAM instead?
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maychang posted on 2019-5-28 09:30 "If I choose flash, it won't last a day due to the number of erase and write times. Is there any way?" Can't I use RAM instead?
It is mainly to detect device failures. If the device suddenly loses power, the fault information will disappear.
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"If the equipment suddenly loses power, the fault information will disappear." "Add" is probably a mistake for "if".  Details Published on 2019-5-28 10:15
"If the equipment suddenly loses power, the fault information will disappear." "Add" is probably a mistake for "if".  Details Published on 2019-5-28 10:12
 
 
 

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lcn1992 posted on 2019-5-28 08:39 Do not use a fixed address for storage, such as Y0->0 Y1->1 Y2->2 Yn->N, and return to address 0 when storing to N. If N is 100 ...
Does it mean to use space to buy time? What does Y0->0 mean? Please advise. Thank you.
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Y0 is a section of data, and Y0->0 means that this section of data is written to the storage area with 0 as the starting address.  Details Published on 2019-5-28 10:18
 
 
 

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sudongpo2018 posted on 2019-5-28 10:08 It is mainly used to detect equipment failure. If the equipment is suddenly powered off, the fault information will disappear
“If the equipment is suddenly powered off, the fault information will disappear” “If” is suspected to be a mistake for “suppose”.
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sudongpo2018 posted on 2019-5-28 10:08 It is mainly used to detect device failures. If the device is suddenly powered off, the fault information will be gone
“It is mainly used to detect device failures. If the device is suddenly powered off, the fault information will be gone” If you are afraid that the power supply will stop suddenly, you can detect the power failure. If you find the power failure, you will immediately enter the sleep mode. The RAM is powered by a battery, and the data can be kept for a long time (in some cases, it can be kept for more than a year), and it will continue to work when the call comes in.
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sudongpo2018 posted on 2019-5-28 10:09 Does it mean to trade space for time? What does Y0->0 mean? Please advise. Thank you
Y0 is a piece of data. Y0->0 means that this piece of data is written to the storage area with address 0 as the first address.
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maychang posted on 2019-5-28 10:15 "It is mainly used to detect equipment failures. If the equipment suddenly loses power, the fault information will disappear." If you are afraid that the power supply will stop suddenly, you can detect the power failure and find that it is...
I understand. Thank you
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maychang posted on 2019-5-28 10:18 Y0 is a piece of data, Y0->0 means that this piece of data is written to the storage area with 0 as the first address.
Oh, thank you
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I have another question, if this kind of writing needs to be completed in 40us, is it not possible to use flash? It needs to be erased before each writing, and I think the erasing time of flash is more than 50us.
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Such frequent writing procedures are busy erasing and saving; you can consider using ferroelectric memory, which does not have the problem of writing life and has fast reading and writing speeds.  Details Published on 2019-5-28 14:13
 
 
 

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sudongpo2018 posted on 2019-5-28 11:23 There is another question. In this case, a write must be completed in 40us. Is it not possible to use flash? It must be erased before each write. The flash erase time...
With such frequent writes, the program is busy erasing and saving; you can consider using ferroelectric memory, which does not have the problem of write life and has fast read and write speeds.
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You can consider using non-volatile memory chips, such as Mram memory, product introduction: (, downloads: 3) Technical support can be provided
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Personal signature存储芯片/MCU/SRAM/PSRAM/DDR/FLASH/MRAM。web.www.sramsun.com  QQ3161422826 TEL:13751192923
 
 

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