| Devices | Class | introduce | Datasheet |
|---|---|---|---|
| AO3401 | Discrete semiconductor;MOS (field effect tube) | Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.2A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 60mΩ @ 4.2A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: P-channel | Download |
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