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STR-NIS5132-GEVB：Strata Enabled NIS5132 12V、44mΩ、3.6A eFuse

STR-NIS5132-GEVB: Strata Enabled NIS5132 12V, 44mΩ, 3.6A eFuse

Overview

The STR-NIS5132-GEVB provides an evaluation board for the NIS5132 eFuse within the Strata Development Environment. The NIS5132 offers a programmable trip current limit, a programmable slew rate, and thermal protection features. The evaluation board provides an on board short circuit load to test the short circuit protection features of the eFuse. This evaluation board must be used with Strata to control the eFuse and monitor telemetry such as input/output voltage, input/output current, and temperature. See the Strata webpage at www.onsemi.com/strata for more details!Click to Download Strata
Features and Applications

Features
Vin Range from 9.2V to 18V
2 independently controlled eFuses that can be placed in parallel
Multiple overload current options
Programmable slew rate

Applications
Hard Drives
Servers
Motherboards
Fan Drives

Design Files

All reference designs on this site are sourced from major semiconductor manufacturers or collected online for learning and research. The copyright belongs to the semiconductor manufacturer or the original author. If you believe that the reference design of this site infringes upon your relevant rights and interests, please send us a rights notice. As a neutral platform service provider, we will take measures to delete the relevant content in accordance with relevant laws after receiving the relevant notice from the rights holder. Please send relevant notifications to email: bbs_service@eeworld.com.cn.

It is your responsibility to test the circuit yourself and determine its suitability for you. EEWorld will not be liable for direct, indirect, special, incidental, consequential or punitive damages arising from any cause or anything connected to any reference design used.

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Update:2024-11-15 01:23:45

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