Domestic ferroelectric memory PB85RS2MC helps optimize and upgrade vehicle electronic control systems

Publisher:温柔的心情Latest update time:2024-05-06 Source: elecfans Reading articles on mobile phones Scan QR code
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The core technologies of new energy vehicles are the well-known power batteries, battery management systems and vehicle control units. The demand for access to various sensor data in vehicle electronic control systems continues to increase, so the demand for high-performance non-volatile storage technology is also increasing, because when the system is performing data analysis or other data processing, only this type of memory can reliably and without delay store the data collected by the sensors.

Vehicle electronic system.png

Therefore, ferroelectric memory FRAM will be a key component to improve these core technologies. Whether it is BMS or VCU, these systems need to monitor, record and analyze the current status information in real time and continuously. Only non-volatile, high-speed, high-read and high-endurance automotive-grade memory FRAM can meet the required reliability and delay-free requirements.


The domestically produced iron memory PB85RS2MC is a random access memory that does not require a refresh cycle and does not require buffering. Data can be stored immediately in the non-volatile memory. The non-volatile storage unit is formed through ferroelectric process and silicon gate CMOS process technology. Compared with Fujitsu and Cypress, it can be lead-free and pollution-free in terms of raw materials, and has certain price advantages. Guoxin Sichen can provide stable supply channels and technical support.

Shunming storage pin pair Cypress.png

The capacity of PB85RS2MC is 2M bit, and the storage unit used can be used for 1E6 read/write operations*1. Data retention: 10 years @85℃ (200 years @25℃); its operating environment temperature range is -40℃ to 85℃, which meets the application scenarios of industrial-grade products and currently has mature application cases in various major industries.

Ferroelectric memory PB85RS2MC performance characteristics:

•Interface type: SPI interface (mode 0 and mode 3)

• Operating voltage: 2.7V to 3.6V, operating frequency: 25 MHz

• Power consumption: 4.8 mA (25 MHz), standby power consumption 9 uA

• High-speed read feature: supports 40MHz high-speed read command

• Operating temperature range: -40℃ to 85℃

•Package: 8-pin SOP wide body 208mil package, RoHS compliant


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