Infineon Technologies Launches New HYPERRAM™ Memory Chip to Double the Bandwidth of High-Performance Low-Pin-Count Solutions

Recently, Infineon Technologies AG launched the new HYPERRAM™ 3.0 device to further improve its high-bandwidth, low-pin-count memory solution. The device has a new 16-bit extended HyperBus™ interface that doubles the throughput to 800MBps. With the launch of the HYPERRAM™ 3.0 device, Infineon can provide a complete portfolio of low-pin-count, low-power, high-bandwidth memory products. The chip is ideal for applications that require extended RAM memory, including video buffering, factory automation, artificial intelligence Internet of Things (AIoT) and automotive vehicle-to-everything (V2X), as well as applications that require scratch pad memory for data-intensive computing.

New HYPERRAM™ 3.0 memory chip

“Infineon has nearly three decades of expertise in memory solutions and we are pleased to bring another industry first to the market,” said Ramesh Chettuvetty, Senior Marketing and Application Director, Automotive Electronics Division, Infineon Technologies. “The new HYPERRAM™ 3.0 memory solution offers significantly higher data throughput per pin than existing technologies such as PSRAM and SDR DRAM. Its low power characteristics enable lower power consumption without sacrificing throughput, making it ideal for industrial and IoT solutions.”

Infineon HYPERRAM™ is a stand-alone volatile memory based on PSRAM that provides an economical and practical way to add memory expansion. Its data rate is comparable to SDR DRAM, but uses fewer pins and consumes less power. The HyperBus™ interface has a higher data throughput per pin, which enables the use of microcontrollers (MCUs) with fewer pins and PCBs with fewer layers, providing a less complex and more cost-optimized design for the target application.