IGBT is popular in the photovoltaic industry

Relatively speaking, SiC IGBT is currently limited by issues such as yield rate and application scenarios, and has not yet been commercially applied on a large scale. In this regard, the person in charge of Infineon said that SiC IGBT is still in the research stage for high voltages above 10,000 volts, and has not yet seen commercial applications. Xiang Jie also said that the current industry consensus is generally that SiC IGBT will only be considered for applications above 10,000 volts. As a wide bandgap device, SiC MOSFET can meet the needs in application scenarios below 10,000 volts. In applications below 10,000 volts, SiC IGBT does not show an advantage in performance, because the saturation voltage drop of SiC IGBT is higher than that of SiC MOSFET in this range. At the same time, in terms of manufacturing process, SiC IGBT is more complex and more expensive.

However, relevant experts also pointed out that my country has a vast territory and is in a stage of rapid economic development. The demand for electricity, especially clean energy such as photovoltaics, is growing rapidly. With the continuous advancement of super-large power projects such as "West-to-East Power Transmission", it is very necessary to research and develop ultra-high voltage AC transmission and transformation technology. It is believed that SiC IGBT, which is capable of high-power working scenarios, will also have broad development space in the future.