FDZ3N513ZT (Fairchild), a device combining an N-channel MOSFET and a Schottky diode

As the mobile phone market continues to develop, and the usage and market growth of smart phones continue to rise, designers are faced with the challenge of increasing functionality in the overall design while reducing the size and number of components. In response to customer needs and development trends, Fairchild Semiconductor has developed a device called FDZ3N513ZT that combines an N-channel MOSFET and a Schottky diode with a footprint of only 1mm x 1mm.

The FDZ3N513ZT is the main element in the boost converter that drives the series of white LEDs that illuminate the smartphone's display (and keys, if there is a keypad).

The solution carefully and precisely optimizes various dynamic characteristics to achieve very low switching losses, thereby enabling mobile phone applications to have very high conversion efficiency and longer battery life.

The FDZ3N513ZT combines a 30V integrated N-channel MOSFET and a Schottky diode with extremely low input capacitance (45pF typical) and overall gate charge (1nC) to improve the efficiency of boost converter designs.

The FDZ3N513ZT is available in a 1mm x 1mm WL-CSP package, which saves 60 percent of board space compared to devices in a 1.6mm x 1.6mm package.

Fairchild Semiconductor is a leader in mobile technology with a broad portfolio of analog and power IPs that can be customized for specific requirements. The FDZ3N513ZT is part of Fairchild Semiconductor's comprehensive advanced MOSFET family that meets the industry's need for compact, low-profile, high-performance MOSFETs in charging, load switching, DC-DC and boost applications.

Price: $0.75 each for 1,000 units

Availability: Samples available now

Delivery time: 12 weeks after receiving order