ROHM launches 650V GaN power stage IC with integrated driver and power tube

ROHM has developed the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. These devices are ideal for main power supplies in industrial and consumer applications such as data servers and AC adapters.

Over the past few years, there has been an increasing demand for greater energy conservation in both the consumer and industrial sectors to achieve a sustainable society. While GaN HEMTs are expected to significantly contribute to miniaturization and improve power conversion efficiency, gate driving is more difficult than with silicon MOSFETs, requiring the use of dedicated gate drivers. To this end, ROHM has developed power stage ICs that leverage core power and analog technologies to integrate GaN HEMTs and gate drivers into a single package, greatly simplifying design and installation.

In addition to this, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) integrates additional functions and peripheral components designed to maximize GaN HEMT performance as well as 650V GaN HEMT (next-generation power devices). Features such as ROHM's wide drive voltage range (2.5V to 30V) are compatible with almost all controller ICs in the main power supply, helping to replace existing silicon (super junction) MOSFETs. This makes it possible to reduce component volume and power losses by 55% at the same time, achieving higher efficiency with a smaller size.

Isaac Lin, General Manager of Delta Electronics' PSADC (Power Semiconductor Application Development Center), said, "GaN devices have attracted widespread attention in the industry as they have made great contributions to the miniaturization and energy saving of equipment."

ROHM's new products utilize ROHM's original analog technology to achieve high-speed and safe gate drive. These products will further promote the use of GaN power devices.