Nexperia launches new 600 V single IGBT for outstanding efficiency in power applications

Providing power electronics designers with a robust 175°C standard IGBT with a fully rated fast recovery diode.

Nijmegen, July 5, 2023: Nexperia, the expert in high-volume production of essential semiconductor devices, today announced its entry into the insulated gate bipolar transistor (IGBT) market with a 600 V device family, starting with the 30A NGW30T60M3DF . Nexperia has added IGBTs to its extensive portfolio, addressing the growing market demand for efficient, high-voltage switching devices with performance and cost requirements. These devices help increase power density in power conversion and motor drive applications, including industrial motor drives (e.g. servo motors from 5 to 20 kW (20 kHz)), robotics, elevators, machine operators, industrial automation, power inverters, uninterruptible power supplies (UPS), photovoltaic (PV) series modules, EV charging, and induction heating and welding.

IGBTs are a relatively mature technology . Nevertheless, the market for these devices is expected to grow with the increasing popularity of solar panels and electric vehicle (EV) chargers. Nexperia’s 600 V IGBTs feature a robust, cost-effective carrier-storing trench gate field-stop (FS) structure that delivers ultra-low conduction and switching loss performance and high ruggedness at operating temperatures up to 175°C. This improves efficiency and reliability in power inverters, induction heaters, welding equipment and industrial applications such as motor drives and servos, robots, elevators, machine operators and industrial automation.

Designers can freely choose between the medium speed (M3) and high speed (H3) series IGBTs. These IGBTs are designed with very tight parameter distribution, allowing multiple devices to be safely connected in parallel. In addition, their thermal resistance is lower than that of competing devices, so they can provide higher output power. These IGBTs are also connected in parallel with full current reverse soft fast recovery diodes. This means that they are suitable for inverter, rectifier and bidirectional conversion circuit applications, and are more robust under overcurrent conditions.

Dr. Jiang Ke, General Manager of Nexperia’s Insulated Gate Bipolar Transistor and Module business unit, said: “By launching the IGBT, Nexperia is providing designers with more power switching device options to meet a wide range of power applications. The IGBT is an ideal complement to Nexperia’s existing CMOS and wide bandgap switching device portfolio, allowing Nexperia to provide a one-stop service for power electronics designers.”

These IGBTs are available in the lead-free TO247-3L standard package and are qualified to the stringent HV-H3TRB quality standard for outdoor applications. Nexperia plans to launch a 1200 V IGBT series following this product launch.