35 A ePower™ power stage ICs enable higher power density and simplified design

Efficient Power Conversion (EPC) has introduced the ePower™ power stage IC, which integrates an entire half-bridge power stage and can achieve up to 35 A of output current at 1 MHz , providing higher performance and smaller solutions for high power density applications, including DC/DC conversion, motor drives and Class-D audio amplifiers.

Efficient Power Conversion (EPC) has announced a 100 V, 35 A integrated circuit designed for 48 V DC/DC conversion for high-density computing applications and 48 V BLDC motor drives for electric vehicles, robotics and drones.

The EPC23102 eGaN integrated circuit achieves a maximum withstand voltage of 100 V, load currents up to 35 A, and switching speeds greater than 1 MHz.

• Key features of the EPC23102 IC, based on EPC’s proprietary GaN IC technology, include integrated input logic interface, level shifter, bootstrap charging and gate drive buffer circuitry to control high-side and low-side field effect transistors with 6.6m Ohm RDS(on) configured as a half-bridge power stage.

• The EPC23102 is available in a more thermally resistant QFN package measuring only 3.5 mm x 5 mm, providing an ultra-small solution for the highest power density applications.

When operating in a 48V/12V buck converter, the EPC23102 offers greater than 96% efficiency and 8 to 17A continuous load current capability at 1MHz switching frequency, with a rated current of 35A.

“The ePower product family enables designers to realize the dramatic performance improvements delivered by GaN technology,” said Alex Lidow, CEO and co-founder of Efficient Power Conversion. “The integrated circuits are easier to adopt, layout, assemble, save board space, and improve efficiency, allowing designers to implement lighter, more precise BLDC motor drives, more efficient 48 V input DC/DC converters, higher fidelity Class-D audio systems, and other industrial and consumer applications.”

The EPC90147 development board features a maximum device voltage of 100 V and a maximum output current of 35 A in a half-bridge configuration with the EPC23102 ePower power stage IC. The development board is designed to simplify the evaluation of the EPC23102. This 2” × 2” (50.8 mm × 50.8 mm) board is designed for optimal switching performance and contains all key components for easy evaluation.

All devices and development boards are available from Digi-Key

The cross-reference search provides cross-references of many silicon-based power management devices and GaN FET alternatives, making it easy to compare parameter differences without the need for datasheets to find the most suitable eGaN FET to improve design efficiency. Simply enter the competitor's part number to find recommended GaN alternatives.