IGBT has large turn-off loss; tailing is a serious obstacle to high-frequency application. This problem consists of two aspects:
1) The problem of charge storage in the base region of GTR, the dominant device of IGBT.
2) Gate parasitic resistance and gate drive charge; they form an RC delay network, causing the IGBT to delay turning on and off.
Here, we first discuss the solution to reason 1. See Figure (1) for the solution circuit.
Figure (1)
The GTR of IGBT uses the base N-type semiconductor. When turned on, it is converted to P-type by applying base current, and the original PNP-type barrier area is changed to PPP path. To ensure reliable conduction, GTR is in full saturation mode of over-opening.
The so-called tailing caused by the base storage effect is due to the over-saturation of GTR, and the excessive conversion of the base N to P type. When turned off, since the P-type semiconductor needs to recombine the cost characteristics and even the N-type, this process causes the tailing of the device.
Figure (2)
This circuit uses a quasi-saturation drive mode to make the IGBT work in a quasi-saturation mode. When the IGBT enters saturation beforehand, the driving voltage will be pulled down by DC to make it exit the saturation state. On the contrary, the IGBT driving voltage rises, and VCE drops, approaching saturation. For standard IGBTs, this circuit can ensure that the on-state voltage drop of the IGBT is basically maintained at the 3.5V level, that is, the IGBT works in the quasi-linear region. In this way, the base of the GTR of the IGBT will not be overdriven, and there is almost no recombination process when it is turned off. In this way, the tailing problem of the device is almost solved! Now, the only problem is that the on-state voltage drop of the IGBT is slightly higher.
This method has become popular in logic ICs. All current ultra-high-speed logic circuits have this structure, including the CPU in your computer! Haha! You have already enjoyed this principle, but in fact, you don’t know it!
Previous article:A Brief Discussion on the Design of Ground Loop of DC-DC Converter
Next article:Methods for Improving Efficiency of Current-Mode Switching Power Supplies
Recommended ReadingLatest update time:2024-11-16 16:31
- Popular Resources
- Popular amplifiers
- MathWorks and NXP Collaborate to Launch Model-Based Design Toolbox for Battery Management Systems
- STMicroelectronics' advanced galvanically isolated gate driver STGAP3S provides flexible protection for IGBTs and SiC MOSFETs
- New diaphragm-free solid-state lithium battery technology is launched: the distance between the positive and negative electrodes is less than 0.000001 meters
- [“Source” Observe the Autumn Series] Application and testing of the next generation of semiconductor gallium oxide device photodetectors
- 采用自主设计封装,绝缘电阻显著提高!ROHM开发出更高电压xEV系统的SiC肖特基势垒二极管
- Will GaN replace SiC? PI's disruptive 1700V InnoMux2 is here to demonstrate
- From Isolation to the Third and a Half Generation: Understanding Naxinwei's Gate Driver IC in One Article
- The appeal of 48 V technology: importance, benefits and key factors in system-level applications
- Important breakthrough in recycling of used lithium-ion batteries
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- About the parallel and series resistors at OUT in the crystal oscillator circuit
- Video animation: intuitive understanding of electromagnetic radiation
- Single-chip microcomputer controlled xc1004 four-axis SPI motion control chip information
- I would like to ask a basic question: Is the discharge speed of parallel capacitors determined by the ESR of the capacitors?
- How to choose the appropriate inductor and its parameters? | MPS invites you to learn practical tips and win gifts by commenting!
- What are the differences between RTU and DTU?
- Three key technologies of mobile robots
- FPGA implementation of terrestrial digital television symbol and carrier synchronization.pdf
- Classic: MSP430 microcontroller enters low power mode program code
- X-NUCLEO-IKS01A3 sensor test based on STM32F401RE development board 3D acceleration LIS2DW12 sensor test...