A new technology that can improve the quality of LED luminous materials has been developed

Foreign media reported recently that North Carolina State University has discovered a new technology to improve the quality of LED light-emitting materials by reducing defects in gallium nitride thin films by 2 to 3 orders of magnitude. Researchers introduced that through this technology, the same input electrical energy can produce 2 times more output light energy, which is very significant for LEDs with low electrical input and ultraviolet light emission range.

LED lighting mainly relies on light-emitting diodes made of gallium nitride thin films. The researchers embedded half the thickness of a 2-micron-thick GaN film into a space gap of 2 microns long, wide and 0.5 microns, and then found that many defects would be attracted and trapped in these void spaces. This reduces many defects in the void space. Therefore, they effectively placed some void spaces in the film and successfully prevented the defects from spreading to the rest of the film. Without this gap technology, there would be about 1010 defects per square centimeter of gallium nitride film. However, after using this technology, the defects per square centimeter will be reduced to about 107. This can produce higher quality and more efficient light-emitting diodes.