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Exclusive | Defect Characterization in Reliability Assessment of Advanced Logic and Memory Devices

Latest update time:2021-09-06 18:05
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Tektronix (Keithley) and the Collaborative Innovation Center for Micro-Nano Electronics and Integrated Systems held the "Semiconductor Device Characterization and Reliability Research Exchange Conference" in Beijing , attracting the attention of scientific and technological talents, research teams, well-known scholars from various fields, and the industry and academia.

Tektronix Semiconductor Industry-Academic-Research Technology Lecture Series

In order to share the content of this conference with more people in the industry, the speeches of eight guests from industry, academia and research will be introduced to you in stages through online lectures. At the same time, in-depth reading articles will be recommended from time to time, aiming to provide the latest research results from academia and industry to research teams in related fields.


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Lecture 2: Advanced Logic and Memory Devices

Defect Characterization in Reliability Assessment

With the rise of AI, big data and other applications, the industry's requirements for storage have reached a new height. However, among the current mainstream storage, NAND has a relatively slow transmission speed, while DRAM, which has a faster transmission speed, is volatile. This has pushed storage suppliers to move towards the next generation of storage, of which ReRAM is one of the representatives .

But ReRAM is a difficult technology to master. In addition to manufacturing, testing is another big challenge that needs to be overcome. For example, we need to solve the problem of defect testing. Under normal conditions, ReRAM can switch between HRS and LRS states. At this time, CFR can be observed, and then the problem can be found based on the observed state. To achieve these goals, it is necessary to develop new characterization technologies for reliability assessment .

To solve the reliability testing problems of advanced logic devices and ReRAM, Associate Professor Zhigang Ji of Liverpool John Moores University, UK, gave a speech titled "Defect characterization for reliability assessment in advanced logic and memory devices", introducing relevant solutions for reliability defect description of advanced logic devices and ReRAM.


The first 30 customers who register to download will receive a printed version of "Characterization and Reliability Data Compilation of Semiconductor Devices" . Scan the QR code or read the original text to download and get it first!

Scan the QR code or click to read the original text to learn more!


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