The third generation of power semiconductors enters the fast lane

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Third - generation semiconductors will be key to future semiconductor technology. After being delayed from 2018 to 2020 due to the trade war and the Covid -19 pandemic, the third-generation semiconductor sector is likely to enter a rapid recovery phase due to a rebound in demand for automotive, industrial and telecommunications applications, according to a survey by TrendForce.

Jibang Consulting pointed out that silicon carbide (SiC) and gallium nitride (GaN) have considerable development potential in the electric vehicle ( EV ) and fast-charging battery markets . The output value of third-generation power semiconductors is expected to increase from US$980 million in 2021 to US$4.71 billion in 2025, in line with a CAGR of 48%.

(Image source: TrendForce)

First, let's look at high-power silicon carbide (SiC) devices, which can play an important role in energy storage, wind power, photovoltaics, EV new energy and other fields. Currently, the power semiconductors of electric vehicles on the market are still more dependent on silicon-based materials ( IGBT/MOSFET ). However, as EV battery power systems gradually develop to voltage levels above 800V , SiC will have higher performance in high-voltage systems.

Tesla has begun using STMicroelectronics' SiC design in its internal inverter for Model 3 vehicles. According to Infineon, the same car can be powered 4% longer with SiC design. Since power accounts for a large part of the cost of EV, the automotive industry has begun to pay more and more attention to third-generation semiconductors. Infineon predicts that SiC chips will account for one-fifth of automotive power electronic components. In the past, fuel saving depended on the engine, but now energy saving depends on third-generation semiconductors.

As SiC gradually replaces some silicon-based designs, the overall vehicle architecture and performance will see significant improvements and enhancements. It is estimated that by 2025, the market size of SiC power semiconductors will reach US$3.398 billion.

The second is the flagship gallium nitride (GaN) suitable for high-frequency scenarios, which has considerable application prospects in mobile phones/communication equipment, tablets/laptops. Compared with traditional fast charging solutions, GaN has a higher power density and can achieve faster charging speeds in a lighter and more portable package.

It is estimated that the GaN power semiconductor market will reach US$1.32 billion by 2025. In addition, TrendForce emphasizes that the manufacturing difficulty and cost of third-generation power semiconductor substrates are higher than those of traditional silicon substrates.

The good news is that all major substrate suppliers are working hard to develop. With the expansion of production capacity by companies such as Wolfspeed, II-VI, and Qromis, it is expected that mass production of 8-inch substrates will be achieved in the second half of this year, and there will still be considerable room for continued growth in the next few years.

It has been proven that the advantages of SiC and GaN are extremely attractive to many manufacturers in the supply chain , many of which have already actively engaged in the research and development of such materials.

TSMC is focusing on the development of silicon-based gallium nitride. Although this technology is limited in communications, it is a competitive component in automotive applications. TSMC revealed in its annual report that 150 and 650 voltages had been developed in 2020. In February last year, STMicroelectronics announced a partnership with TSMC to manufacture automotive compound semiconductors.

TSMC has made progress in manufacturing GaN devices on 8-inch wafers, while 6-inch wafers are still the mainstream of compound semiconductors. Many of TSMC's retired 8-inch wafer fabs will take on new compound semiconductor production.

Like TSMC, VIS is also focused on the development of GaN on Silicon substrates. Leuh Fang, president of VIS, said the foundry aims to establish a complete manufacturing process, including wafer ultra-thinning.

Sino-American Silicon Products Inc. (SAS) is expanding into third-generation semiconductors, and last year, the company became the largest shareholder in compound semiconductor maker AWSC 's entry into telecommunications applications. Its subsidiary Global Wafer is also shaping the production of third-generation semiconductor substrates, but still needs to improve yield and cost, according to Fortune magazine.

“A 6-inch silicon wafer costs $20, while a 6-inch SiC wafer costs $1,500,” said MK Lu, director of SAS. He said automotive SiC MOSFETs will only become popular when SiC costs drop below $750, “which will take more than five years.”