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Download to get a gift | Rohm teaches you tips on power supply design and application

Latest update time:2021-09-01 15:02
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Compared with traditional silicon devices, silicon carbide (SiC) devices have become viable candidates for the next generation of low-loss semiconductors due to their low on-resistance characteristics and excellent high-temperature, high-frequency and high-voltage performance. In addition, SiC allows designers to use fewer components, further reducing the complexity of the design. ROHM is at the forefront of the development of SiC power devices and modules, which have achieved better energy saving in applications across many industries. For power ICs or power components required for power supply, power conversion, and switching circuits, ROHM will explain the design techniques to you through application manuals to help you.



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