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The influence and design method of RCD absorption circuit

  • 2013-06-18
  • 733.81KB
  • Points it Requires : 2

Influence and design method of RCD absorption circuit We can qualitatively analyze the influence of circuit parameter selection on the transient response of the circuit: 1. The RCD capacitor C is too large and the voltage at the capacitor terminal rises very slowly, which causes the MOSFET voltage to rise slowly, resulting in a long interval from MOSFET shutdown to secondary conduction. The transformer energy transfer process is slow, and a considerable part of the primary excitation inductance energy is consumed in the RC circuit.

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