The high-frequency small-signal equivalent circuit model of a transistor can be obtained by two methods: one is to regard the transistor as a two-port network, list the current and voltage equations, and propose a network model that satisfies the equations. The Y parameter model is often used; the other is to propose a model based on the physical process occurring inside the transistor, that is, the π-type parameter model; the same transistor can be represented by different equivalent circuits in different occasions, and the various equivalent circuits of the same transistor should be equivalent to each other, and the parameters in each equivalent circuit can be converted to each other.
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