MOS Capacitor Outline · Announcement: Lecture outline and summary have been sent out. There will be a test in the review class next Wednesday. · Qualitative description: - Metal oxide semiconductor in thermal equilibrium structure definition: metal/silicon dioxide/p-type (example: n-MOS) Electrostatic potential related to metal and silicon: m Zero bias case: if: m > pSi, silicon surface depletion Reverse bias: from depletion to flat band to accumulation Forward bias: from depletion to critical to inversion layer · Quantitative model: Metal oxide depletion approximation in thermal equilibrium Applied to S capacitor Flat band voltage: VFB Accumulation layer charge density: qA* Maximum depletion width XDT Turn-on voltage: VT Inversion layer charge density: qN* · Application of bias metal oxide semiconductor in adjacent region Depletion layer width Effect of turn-on voltage
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