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Parameter drift and failure mechanism of power VDMOS devices

  • 2013-09-22
  • 320.78KB
  • Points it Requires : 2

  The working conditions of power VDMOS devices are usually harsh, so its reliability research is particularly important. This article summarizes the results of many current VDMOS device reliability studies, focusing on the drift of key electrical parameters and its failure mechanism, the abnormal breakdown characteristics and improvement methods of power VDMOS under high temperature and high voltage working environment, and also briefly discusses the failure caused by bonding and metallization process.

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