A double-membrane bridge microwave MEMS switch is introduced, the design and optimization methods of the switch are given, the simulation model of the switch is established, and the double-membrane bridge switch sample is manufactured using silicon surface micromachining technology. Its main structure is to make CPW metal transmission line electrodes and dielectric layers on a silicon substrate, and then make a metal membrane bridge with a micro-inductor structure to improve the isolation of the switch. The simulation results using HFSS software show that the switch has good isolation performance in the microwave low frequency band (3~6GHz). The electrical performance indicators of the developed switch sample in the on-chip test are: insertion loss less than 0.3dB, isolation greater than 40dB, and driving voltage less than 24V. Keywords: microelectromechanical system; radio frequency switch; high isolation
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