Abstract: Polycrystalline silicon thin films were prepared by combining hot-wire chemical vapor deposition and plasma-enhanced chemical vapor deposition. The film structure and optical properties were studied by Raman scattering, XRD, absorption spectrum and other methods. The results show that compared with the simple hot-wire and plasma technology, the plasma-hot-wire CVD technology is conducive to the crystallization of the film and improves the uniformity of the film under certain conditions. Auger spectrum studies show that the introduction of plasma greatly reduces the formation of silicide on the surface of the high-temperature hot-wire.
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