Power Field-Effect Transistor, 120A I(D), 40V, 0.0038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Objectid | 1384791227 |
package instruction | GREEN, PLASTIC, TO-220, 3 PIN |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 78 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 40 V |
Maximum drain current (ID) | 120 A |
Maximum drain-source on-resistance | 0.0038 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | P-CHANNEL |
Maximum pulsed drain current (IDM) | 480 A |
surface mount | NO |
Terminal surface | TIN |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Transistor component materials | SILICON |
IPP120P04P404AKSA1 | IPI120P04P404AKSA1 | IPB120P04P404ATMA1 | |
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Description | Power Field-Effect Transistor, 120A I(D), 40V, 0.0038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | MOSFET P-CHANNEL | MOSFET P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE | - | Single |
Product Category | - | MOSFET | MOSFET |
Manufacturer | - | Infineon | Infineon |
Technology | - | Si | Si |
Package / Case | - | TO-262-3 | TO-263-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | P-Channel | P-Channel |
Packaging | - | Tube | Reel |
Height | - | 9.45 mm | 4.4 mm |
Length | - | 10.2 mm | 10 mm |
Transistor Type | - | 1 P-Channel | 1 P-Channel |
Width | - | 4.5 mm | 9.25 mm |
Unit Weight | - | 0.084199 oz | 0.139332 oz |