Bipolar Transistors - Pre-Biased
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| package instruction | FSM, 2-1E1A, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Other features | BUILT IN BIAS RESISTOR RATIO IS 1 |
| Maximum collector current (IC) | 0.05 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 60 |
| JESD-30 code | R-PDSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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