FDD5680 datasheet, PDF - EEWORLD Datasheet

FDD5680: Description38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252; CategoryDiscrete semiconductor The transistor; File Size82KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Parameter Name	Attribute value
Brand Name	Fairchild Semiconduc
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	DPAK
package instruction	TO-252, 3 PIN
Contacts	3
Manufacturer packaging code	TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	140 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	38 A
Maximum drain current (ID)	38 A
Maximum drain-source on-resistance	0.021 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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