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MJD3055T4

Description
Bipolar Transistors - BJT 10A 60V 20W NPN
CategoryDiscrete semiconductor    The transistor   
File Size125KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJD3055T4 Overview

Bipolar Transistors - BJT 10A 60V 20W NPN

MJD3055T4 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
MJD2955 (PNP),
MJD3055 (NPN)
Complementary Power
Transistors
DPAK for Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
High Current Gain−Bandwidth Product
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
1 2
1
3
2
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
{
Max
60
70
5
10
6
20
0.16
1.75
0.014
T
J
, T
stg
HBM
MM
−55 to +150
3B
C
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
V
V
3
DPAK
CASE 369C
STYLE 1
IPAK
CASE 369D
STYLE 1
P
D
MARKING DIAGRAMS
AYWW
J
xx55G
DPAK
A
Y
WW
Jxx55
G
AYWW
J
xx55G
IPAK
= Assembly Location
= Year
= Work Week
= Device Code
x = 29 or 30
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 13
Publication Order Number:
MJD2955/D
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