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ES1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size172KB,2 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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ES1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0200 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
ES1A THRU ES1J
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
l
l
l
l
l
l
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Superfast recovery times for high efficiency
Plastic package has Underwriters Laboratory
SMA/DO-214AC
Flammability Classification 94V-O
Glass passivated junction
High temperature soldering:
260 /10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-
750,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave 60Hz resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS
50
100
150
200
300
400
600
Volts
35
70
105
140
210
280
420
Volts
50
100
150
200
300
400
600
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T
L
=120
Peak Forward Surge Current 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current T
A
=25
At Rated DC Blocking Voltage T
A
=100
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
NOTES:
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
R JL
T
J
,T
STG
1.0
30.0
0.95
5.0
100
35.0
10.0
35
-50 to +150
1.25
1.7
Amps
Amps
Volts
A
n
S
P
F
/W
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A

ES1A Related Products

ES1A ES1B ES1C ES1D ES1E ES1G ES1J
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 2 - 2 2
Number of components 1 1 1 1 - 1 1
Processing package description Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN SMA, 2 PIN Plastic, SMA, 2 PIN - Plastic, HSMA, 2 PIN SMA, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE - DISCONTINUED TRANSFERRED
packaging shape Rectangle Rectangle RECTANGULAR Rectangle - Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes - Yes Yes
Terminal form C BEND C BEND C BEND C BEND - C BEND C BEND
Terminal location pair pair DUAL pair - pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy
structure single single SINGLE single - single single
Diode component materials silicon silicon SILICON silicon - silicon silicon
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode - Signal diode Signal diode
Maximum reverse recovery time 0.0200 us 0.0350 us 0.0150 us 0.0200 us - 0.0600 us 0.0600 us
Maximum repetitive peak reverse voltage 50 V 100 V 150 V 200 V - 400 V 600 V
Maximum average forward current 1 A 1 A 1 A 1 A - 1 A 1 A
terminal coating - PURE Tin MATTE TIN PURE Tin - tin lead NOT SPECIFIED

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