D315CH32C8K9 datasheet, PDF - EEWORLD Datasheet

D315CH32C8K9: DescriptionSilicon Controlled Rectifier, 2110A I(T)RMS, 3200V V(DRM), 2880V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size273KB，5 Pages; ManufacturerIXYS

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D315CH32C8K9 Overview

Silicon Controlled Rectifier, 2110A I(T)RMS, 3200V V(DRM), 2880V V(RRM), 1 Element

Parameter Name	Attribute value
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Other features	FAST
Nominal circuit commutation break time	160 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	20 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	3 V
JESD-30 code	O-CEDB-N2
Number of components	1
Number of terminals	2
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	2110 A
Maximum repetitive peak off-state leakage current	100000 µA
Off-state repetitive peak voltage	3200 V
Repeated peak reverse voltage	2880 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR
Base Number Matches	1

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