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ES5GG

CategoryDiscrete semiconductor    Fast recovery diode   
File Size272KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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ES5DG THRU ES5JG
ES5DG THRU ES5JG
5.0AMPS. SUPER FAST SURFACE MOUNT RECTIFIER
FEATURE
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260℃/10 seconds at terminals.
.Superfast
recovery time for high efficiency
.For
surface mounted application.
.Easy
pick and place.
SMC(DO-214AB)
.128(3.25)
.108(2.75)
.280(7.11)
.260(6.60)
.103(2.62)
.079(2.00)
.320(8.13)
.305(7.75)
.245(6.22)
.220(5.59)
.012(0.305)
.006(0.152)
MECHANICAL DATA
.Case:
Molded plastic
.Epoxy:
UL94V-0 rate flame retardant
.Lead:
MIL-STD- 202E, Method 208 guaranteed
.Polarity:Color
band denotes cathode end
.Mounting
position: Any
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
.060((1.52)
.030(0.76)
.008(0.203)
.002(0.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at rated DC blocking voltage
@TJ =25°C
@TJ =125°C
SYM
BOL
ES5DG
200
140
200
ES5GG
400
280
400
5.0
120.0
ES5JG
600
420
600
units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
(JA)
T
STG
T
J
0.95
1.3
5.0
500.0
35
1.7
V
µA
nS
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage Temperature
Operation Junction Temperature
45
55
-55 to +150
-55 to +150
30
pF
°C /W
°C
°C
Note:
1. Reverse Recovery test Condition: If=0.5A,IR=1.0A,IRR=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. P.C.B.Mounted on0.6×0.6”(15.0×15.0mm)[0.013mm thick]Copper Pad Area.
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