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NE5532FE

Description
Internally-compensated dual low noise operational amplifier
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size130KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

NE5532FE Overview

Internally-compensated dual low noise operational amplifier

NE5532FE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instructionDIP, DIP8,.3
Reach Compliance Codeunknow
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C0.8 µA
frequency compensationYES
Maximum input offset voltage5000 µV
JESD-30 codeR-XDIP-T8
JESD-609 codee0
low-dissonanceNO
Nominal Negative Supply Voltage (Vsup)-15 V
Number of functions2
Number of terminals8
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
power supply+-15 V
Certification statusNot Qualified
Nominal slew rate9 V/us
Maximum slew rate16 mA
Supply voltage upper limit22 V
Nominal supply voltage (Vsup)15 V
surface mountNO
technologyBIPOLAR
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Nominal Uniform Gain Bandwidth10000 kHz
Minimum voltage gain10000
INTEGRATED CIRCUITS
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product specification
IC11 Data Handbook
1997 Sept 29
Philips
Semiconductors
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