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MBR830MFST3G

Description
Schottky Diodes u0026 Rectifiers 8.0 A 30 V SCHOTTKY DIOD
CategoryDiscrete semiconductor    diode   
File Size55KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MBR830MFST3G Overview

Schottky Diodes u0026 Rectifiers 8.0 A 30 V SCHOTTKY DIOD

MBR830MFST3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSO-8FL, DFN6, 6 PIN
Manufacturer packaging code488AA
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
30 VOLTS
1,2,3
5,6
Mechanical Characteristics:
MARKING
DIAGRAM
A
1
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 143°C)
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 143°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
Unit
V
30
8.0
16
A
A
C
B830
AYWZZ
C
A
A
Not Used
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B830
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
MBR830MFST1G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
5000 /
Tape & Reel
1500 /
Tape & Reel
5000 /
Tape & Reel
I
FSM
150
A
MBR830MFST3G
NRVB830MFST1G
T
stg
T
J
E
AS
−65 to +150
−40 to +150
100
°C
°C
mJ
NRVB830MFST3G
3B
M4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
©
Semiconductor Components Industries, LLC, 2013
1
October, 2013 − Rev. 0
Publication Order Number:
MBR830MFS/D

MBR830MFST3G Related Products

MBR830MFST3G NRVB830MFST3G
Description Schottky Diodes u0026 Rectifiers 8.0 A 30 V SCHOTTKY DIOD ON Semiconductor 8.0 A 30 V SCHOTTKY DIOD
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
package instruction SO-8FL, DFN6, 6 PIN SO-8FL, DFN6, 6 PIN
Manufacturer packaging code 488AA 488AA
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.7 V 0.7 V
JESD-30 code R-PDSO-F5 R-PDSO-F5
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 1 1
Phase 1 1
Number of terminals 5 5
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse current 200 µA 200 µA
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
TI official website cannot be accessed! ? ?
www.ti.com www.ti.com.cn...
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