PD - 94905
IRG4BC10UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous Generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Lead-Free
UltraFast CoPack IGBT
C
Features
V
CES
= 600V
V
CE(on) typ.
=
2.15V
G
E
@V
GE
= 15V, I
C
= 5.0A
n-channel
t
f
(typ.) = 140ns
Benefits
Generation 4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220AB
Absolute Maximum Ratings
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.50
2 (0.07)
Max.
3.3
7.0
80
Units
°C/W
g (oz)
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1
12/23/03
IRG4BC10UDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
0.54
V
CE(on)
Collector-to-Emitter Saturation Voltage
2.15
2.61
2.30
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
-8.7
g
fe
Forward Transconductance
2.8 4.2
I
CES
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
1.5
1.4
I
GES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 1.0mA
2.6
I
C
= 5.0A
V
GE
= 15V
V
I
C
= 8.5A
See Fig. 2, 5
I
C
= 5.0A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
= 100V, I
C
= 5.0A
250
µA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
= 4.0A
See Fig. 13
1.7
I
C
= 4.0A, T
J
= 125°C
±100 n A
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
Typ.
15
2.6
5.8
40
16
87
140
0.14
0.12
0.26
38
18
95
250
0.45
7.5
270
21
3.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
22
I
C
= 5.0A
4.0
nC
V
CC
= 400V
See Fig. 8
8.7
V
GE
= 15V
T
J
= 25°C
ns
I
C
= 5.0A, V
CC
= 480V
130
V
GE
= 15V, R
G
= 100Ω
210
Energy losses include "tail" and
diode reverse recovery.
mJ
See Fig. 9, 10, 18
0.33
T
J
= 150°C, See Fig. 11, 18
ns
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100Ω
Energy losses include "tail" and
mJ diode reverse recovery.
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
42
ns
T
J
= 25°C See Fig.
57
T
J
= 125°C
14
I
F
= 4.0A
5.2
A
T
J
= 25°C See Fig.
6.7
T
J
= 125°C
15
V
R
= 200V
60
nC T
J
= 25°C See Fig.
105
T
J
= 125°C
16
di/dt = 200A/µs
A/µs T
J
= 25°C See Fig.
T
J
= 125°C
17
Details of note
through
are on the last page
2
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IRG4BC10UDPbF
7
For both:
6
LOAD CURRENT (A)
5
4
3
2
1
0
Ideal diodes
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation =
9.2
W
Square wave:
60% of rated
voltage
I
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
10
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
o
C
1
T
J
= 25
o
C
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
14
0.1
V
GE
= 15V
20µs PULSE WIDTH
1
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4BC10UDPbF
10
5.0
8
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 10 A
Maximum DC Collector Current(A)
4.0
6
3.0
4
I
C
=
5.0 A
5
I
C
= 2.5 A
2
2.0
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10UDPbF
500
400
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
16
C, Capacitance (pF)
300
Cies
12
200
8
100
Coes
Cres
4
0
1
10
0
0
4
8
12
16
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 5.0A
10
100
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
1
I
C
=
10
A
I
C
=
5.0A
5
A
I
C
=
2.5
A
0.25
0.1
0.20
50
60
70
80
90
100
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
G
, Gate Resistance (Ω)
, Gate Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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