MT5C1605-35 datasheet, PDF - EEWORLD Datasheet

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MT5C1605-35: DescriptionStandard SRAM, 4KX4, 35ns, CMOS, PDIP22; Categorystorage storage; File Size636KB，7 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT5C1605-35 Overview

Standard SRAM, 4KX4, 35ns, CMOS, PDIP22

MT5C1605-35 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T22
JESD-609 code	e0
memory density	16384 bi
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	22
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.003 A
Minimum standby current	4.5 V
Maximum slew rate	0.1 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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MT5C1605-35 Related Products

	MT5C1605-35	MT5C1605C-12L	MT5C1605C-12	MT5C1605C-35	MT5C1605C-35L	MT5C1605C-20	MT5C1605C-25	MT5C1605C-20L	MT5C1605C-25L	MT5C1605DJ-30L
Description	Standard SRAM, 4KX4, 35ns, CMOS, PDIP22	Standard SRAM, 4KX4, 12ns, CMOS, CDIP22	Standard SRAM, 4KX4, 12ns, CMOS, CDIP22	Standard SRAM, 4KX4, 35ns, CMOS, CDIP22	Standard SRAM, 4KX4, 35ns, CMOS, CDIP22	Standard SRAM, 4KX4, 20ns, CMOS, CDIP22	Standard SRAM, 4KX4, 25ns, CMOS, CDIP22	Standard SRAM, 4KX4, 20ns, CMOS, CDIP22	Standard SRAM, 4KX4, 25ns, CMOS, CDIP22	Standard SRAM, 4KX4, 30ns, CMOS, PDSO24
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	unknown	unknown	not_compliant
Maximum access time	35 ns	12 ns	12 ns	35 ns	35 ns	20 ns	25 ns	20 ns	25 ns	30 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22	R-PDSO-J24
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	16384 bi	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4	4	4
Number of terminals	22	22	22	22	22	22	22	22	22	24
word count	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words
character code	4000	4000	4000	4000	4000	4000	4000	4000	4000	4000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	SOJ
Encapsulate equivalent code	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	DIP22,.3	SOJ24,.34
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.003 A	0.00025 A	0.003 A	0.003 A	0.00025 A	0.003 A	0.003 A	0.00025 A	0.00025 A	0.00025 A
Minimum standby current	4.5 V	2 V	4.5 V	4.5 V	2 V	4.5 V	4.5 V	2 V	2 V	2 V
Maximum slew rate	0.1 mA	0.14 mA	0.14 mA	0.1 mA	0.1 mA	0.11 mA	0.1 mA	0.11 mA	0.1 mA	0.1 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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