72141L35J datasheet, PDF - EEWORLD Datasheet

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72141L35J: DescriptionFIFO, 4KX9, 35ns, Asynchronous, CMOS, PQCC32; Categorystorage storage; File Size962KB，14 Pages; ManufacturerIDT (Integrated Device Technology)

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72141L35J Overview

FIFO, 4KX9, 35ns, Asynchronous, CMOS, PQCC32

72141L35J Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	35 ns
Maximum clock frequency (fCLK)	22.2 MHz
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
memory density	36864 bit
Memory IC Type	OTHER FIFO
memory width	9
Humidity sensitivity level	1
Number of terminals	32
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX9
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.002 A
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
Base Number Matches	1

72141L35J Related Products

	72141L35J	72141L65P	72131L120P	72131L120J	72131L65C	72131L65J	72131L65P	72131L80CB	72141S50J
Description	FIFO, 4KX9, 35ns, Asynchronous, CMOS, PQCC32	FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28	FIFO, 2KX9, 120ns, Asynchronous, CMOS, PDIP28	FIFO, 2KX9, 120ns, Asynchronous, CMOS, PQCC32	FIFO, 2KX9, 65ns, Asynchronous, CMOS, CDIP28	FIFO, 2KX9, 65ns, Asynchronous, CMOS, PQCC32	FIFO, 2KX9, 65ns, Asynchronous, CMOS, PDIP28	FIFO, 2KX9, 80ns, Asynchronous, CMOS, CDIP28	FIFO, 4KX9, 50ns, Asynchronous, CMOS, PQCC32
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	35 ns	65 ns	120 ns	120 ns	65 ns	65 ns	65 ns	80 ns	50 ns
Maximum clock frequency (fCLK)	22.2 MHz	12.5 MHz	7.1 MHz	7.1 MHz	12.5 MHz	12.5 MHz	12.5 MHz	10 MHz	15.4 MHz
JESD-30 code	R-PQCC-J32	R-PDIP-T28	R-PDIP-T28	R-PQCC-J32	R-XDIP-T28	R-PQCC-J32	R-PDIP-T28	R-XDIP-T28	R-PQCC-J32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	36864 bit	36864 bit	18432 bit	18432 bit	18432 bit	18432 bit	18432 bit	18432 bit	36864 bit
Memory IC Type	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO
memory width	9	9	9	9	9	9	9	9	9
Number of terminals	32	28	28	32	28	32	28	28	32
word count	4096 words	4096 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	4096 words
character code	4000	4000	2000	2000	2000	2000	2000	2000	4000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	125 °C	70 °C
organize	4KX9	4KX9	2KX9	2KX9	2KX9	2KX9	2KX9	2KX9	4KX9
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY
encapsulated code	QCCJ	DIP	DIP	QCCJ	DIP	QCCJ	DIP	DIP	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6	DIP28,.6	DIP28,.6	LDCC32,.5X.6	DIP28,.6	LDCC32,.5X.6	DIP28,.6	DIP28,.6	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225	225	225
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.004 A	0.008 A
Maximum slew rate	0.14 mA	0.14 mA	0.14 mA	0.14 mA	0.14 mA	0.14 mA	0.14 mA	0.16 mA	0.14 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	NO	YES	NO	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)
Terminal form	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm
Terminal location	QUAD	DUAL	DUAL	QUAD	DUAL	QUAD	DUAL	DUAL	QUAD
Maximum time at peak reflow temperature	30	30	30	30	30	30	30	30	30
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-
Humidity sensitivity level	1	1	1	1	-	1	1	-	1

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