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MT18HTF12872AIZ-800XX

Description
DDR DRAM Module, 128MX72, CMOS, HALOGEN FREE, UDIMM-240
Categorystorage    storage   
File Size402KB,18 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT18HTF12872AIZ-800XX Overview

DDR DRAM Module, 128MX72, CMOS, HALOGEN FREE, UDIMM-240

MT18HTF12872AIZ-800XX Parametric

Parameter NameAttribute value
Objectid1062842195
Parts packaging codeDIMM
package instructionHALOGEN FREE, UDIMM-240
Contacts240
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N240
length133.35 mm
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Maximum seat height30.5 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 UDIMM
Features
DDR2 SDRAM UDIMM
MT18HTF12872AZ – 1GB
MT18HTF25672AZ – 2GB
MT18HTF51272AZ – 4GB
Features
• 240-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2-8500, PC2-6400,
PC2-5300, PC2-4200, or PC2-3200
• 1GB (128 Meg x 72), 2GB (256 Meg x 72), 4GB (512
Meg x 72)
• V
DD
= V
DDQ
1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Supports ECC error detection and correction
• Dual-rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BLs): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
Speed
Grade
-1GA
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-8500
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 7
1066
CL = 6
800
800
800
CL = 5
667
800
667
667
CL = 4
533
533
533
553
553
400
CL = 3
400
400
400
400
400
400
t
RCD
t
RP
t
RC
Figure 1: 240-Pin UDIMM (MO-237 R/C G)
Module height: 30mm (1.18in)
Options
• Operating temperature
– Commercial (0°C
T
A
+70°C)
– Industrial (–40°C
T
A
+85°C)
1
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CL
2
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
Notes:
Marking
None
I
Z
-1GA
-80E
-800
-667
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
(ns)
13.125
12.5
15
15
15
15
(ns)
13.125
12.5
15
15
15
15
(ns)
58.125
57.5
60
60
55
55
PDF: 09005aef83c6d17f
htf18c128_256_512x72az.fm - Rev. E 4/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
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