EM6AB160TSD-5G datasheet, PDF - EEWORLD Datasheet

EM6AB160TSD-5G: DescriptionDDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66; Categorystorage storage; File Size466KB，61 Pages; ManufacturerEtron; Websitehttp://www.etron.com/; Environmental Compliance

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EM6AB160TSD-5G Overview

DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1281742279
package instruction	TSOP2,
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66
length	22.22 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	66
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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