BTS100-E3045 datasheet, PDF - EEWORLD Datasheet

BTS100-E3045: Description8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size302KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BTS100-E3045 Overview

8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	32 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	BTS100-E3045	BTS100E3045
Description	8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN
Maker	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	TO-220ABSMD VERSION, 3 PIN
Contacts	3	3
Reach Compliance Code	unknown	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (ID)	8 A	8 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	32 A	32 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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