IRLU7843-701PBF datasheet, PDF

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IRLU7843-701PBF: Descriptionmosfet N-CH 30v 161a ipak; Categorysemiconductor Discrete semiconductor; File Size366KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLU7843-701PBF Overview

mosfet N-CH 30v 161a ipak

IRLU7843-701PBF Parametric

Parameter Name	Attribute value
Datasheets
IRL(R,U)7843PbF
Product Photos
DPAK_369D−01
Product Training Modules
Discrete Power MOSFETs 40V and Below
Category	Discrete Semiconductor Products
Family	FETs - Single
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	161A (Tc)
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) @ Vgs	50nC @ 4.5V
Input Capacitance (Ciss) @ Vds	4380pF @ 15V
Power - Max	140W
Mounting Type	Through Hole
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package	I-Pak

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Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Lead-Free

Benefits

Very Low RDS(on) at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

HEXFET

Power MOSFET

IRLR7843PbF

IRLU7843PbF

3.3m

PD - 95440B

DSS

30V

DS(on)

max

34nC

D-Pak

IRLR7843PbF

I-Pak

IRLU7843PbF

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Max.

± 20

161

620

140

0.95

-55 to + 175

300 (1.6mm from case)

Units

Maximum Power Dissipation

113

W/°C

°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Typ.

Max.

1.05

110

Units

°C/W

gÃ

–––

Notes

through

are on page 11

www.irf.com

04/30/08

IRLU7843-701PBF Related Products

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Description	mosfet N-CH 30v 161a ipak	HEXFET Power MOSFET	mosfet N-CH 30v 161a dpak	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Is it Rohs certified?	-	incompatible	conform to	incompatible	-	conform to	conform to	incompatible
Maker	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	-	TO-251AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
package instruction	-	IN-LINE, R-PSIP-T3	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	-	3	3	3	3	3	3	3
Reach Compliance Code	-	compliant	unknown	unknown	unknown	unknown	unknown	compliant
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	1440 mJ	1440 mJ	1440 mJ	1440 mJ	1440 mJ	1440 mJ	1440 mJ
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	30 V	30 V	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	-	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Maximum drain-source on-resistance	-	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-251AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	-	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	-	e0	e3	e0	e0	e3	e3	e0
Humidity sensitivity level	-	1	1	1	1	1	1	1
Number of components	-	1	1	1	1	1	1	1
Number of terminals	-	3	2	2	2	2	2	2
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	245	260	NOT SPECIFIED	260	260	260	245
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	620 A	620 A	620 A	620 A	620 A	620 A	620 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	-	NO	YES	YES	YES	YES	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	TIN LEAD	TIN LEAD	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	TIN LEAD
Terminal form	-	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	30	30	NOT SPECIFIED	NOT SPECIFIED	30	30	30
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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